High-efficiency picoamperes dark current InGaAs P-I-N photodetectors on Si and GaAs substrates

Author

Ejeckam, F.E. ; Chua, C.L. ; Zhu, Z.H. ; Lo, Y.H.

Author_Institution

Sch. of Electr. Eng., Cornell Univ., Ithaca, NY, USA

Volume

1

fYear

1995

fDate

30-31 Oct 1995

Firstpage

23

Abstract

We demonstrate record performance operation of long wavelength (1.55 μm) InGaAs photodetectors on Si and GaAs substrates using a wafer bonding technique. We fabricated long wavelength (1.55 μm) photodetectors on Si and GaAs wafers using the technique of bonding by atomic rearrangement (BAR). The InGaAs PIN photodetector was bonded to a heavily p-doped Si substrate to minimize the interface resistance and to a GaAs/AlAs Bragg mirror

Keywords

III-V semiconductors; dark conductivity; gallium arsenide; indium compounds; infrared detectors; integrated optoelectronics; mirrors; optical fabrication; p-i-n photodiodes; photodetectors; substrates; wafer bonding; 1.55 mum; GaAs; GaAs substrates; GaAs/AlAs Bragg mirror; InGaAs; InGaAs P-I-N photodetectors; InGaAs PIN photodetector; Si; Si substrates; bonding by atomic rearrangement; heavily p-doped Si substrate; high-efficiency picoamperes dark current; interface resistance; long wavelength; photodetectors; wafer bonding; Dark current; Detectors; Gallium arsenide; Gold; Indium gallium arsenide; Indium phosphide; PIN photodiodes; Photodetectors; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484489

Filename

484489