Active magnetic field canceling system

Author

Wei-li Sun ; Feng-Chang Chuang ; Yu-Lin Song ; Chwen Yu ; Tzyh-Ghuang Ma ; Tzong-Lin Wu ; Luh-Maan Chang

Author_Institution

Commun. & Electromagn. Eng., Nat. Taiwan Univ. of Sci. & Technol., Taipei, Taiwan

fYear

2013

fDate

15-18 Dec. 2013

Firstpage

119

Lastpage

122

Abstract

The extremely low frequency (ELF) magnetic field has significant impact on yield rate especially when the processing reaches less than 14 nanometer in next-generation nano-Fab. For sensitive equipments such as the SEMs, TEMs, STEMs, FIB writers, and E-beam writers, it suggests that the ELF magnetic field should be lower than 0.5 milli-Gauss to guarantee good yield. Therefore, mitigating the magnetic field by active/passive approaches such as the material shielding, wire permutation, and active canceling are highly demanded.

Keywords

focused ion beam technology; magnetic fields; magnetic shielding; scanning electron microscopy; scanning-transmission electron microscopy; wires (electric); E-beam writers; FIB writers; SEM; STEM; active magnetic field canceling system; active-passive approach; extremely low frequency magnetic field; material shielding; next-generation nanoFab; wire permutation; Coils; Electromagnetic compatibility; Magnetic fields; Magnetic sensors; Power amplifiers; Prototypes; ELF(extremely low frequency); Helmholtz Coil; prototype; sensor;

fLanguage

English

Publisher

ieee

Conference_Titel

Electromagnetic Compatibility of Integrated Circuits (EMC Compo), 2013 9th Intl Workshop on

Conference_Location

Nara

Type

conf

DOI

10.1109/EMCCompo.2013.6735184

Filename

6735184