DocumentCode :
3225776
Title :
1.8 V CMOS low noise CPPLL design
Author :
Tao, Huibin ; Zhang, Pengzhan ; Shao, Zhibiao
Author_Institution :
Sch. of Electron. & Inf., Xi´´an Jiaotong Univ., Xi´´an, China
fYear :
2009
fDate :
25-27 Dec. 2009
Firstpage :
282
Lastpage :
286
Abstract :
This paper describes a design of a low noise Charge Pump PLL. The design utilizes a top-down methodology to determine system parameters. Using the behavioral simulation, the performance of the PLL system is verified. The PLL circuit design is based on 0.18 um CMOS process and its supply voltage is 1.8 V.The PLL has an input clock frequency of 12 MHz and an output clock frequency of 480 MHz with eight phases. According to the measurement the cycle-to-cycle jitter of the output clock at 480 Mhz is only 60 ps peak-to-peak, the long term jitter is 90 ps. Moreover, the maximum lock time is about 6 us and the maximum frequency overshot is about 13%, power dissipation is 7.2 mW. The testing results prove precision of behavioral simulation.
Keywords :
CMOS integrated circuits; charge pump circuits; circuit simulation; network synthesis; phase locked loops; CMOS process; behavioral simulation; frequency 12 MHz; frequency 480 MHz; low noise CPPLL design; low noise charge pump PLL; power 7.2 mW; size 0.18 mum; voltage 1.8 V; CMOS process; Charge pumps; Circuit noise; Circuit simulation; Circuit synthesis; Clocks; Frequency; Jitter; Phase locked loops; Voltage; Charge Pump; Low noise; PLL;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
Type :
conf
DOI :
10.1109/EDSSC.2009.5394275
Filename :
5394275
Link To Document :
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