Title :
Design and simulation of a lumped element metal finger capacitor for RF-CMOS power splitters
Author :
Uddin, M.J. ; Nordin, A.N. ; Ibrahimy, M.I. ; Reaz, M.B.I.
Author_Institution :
Dept. of Electr. & Comput. Eng., Int. Islamic Univ. Malaysia, Kuala Lumpur, Malaysia
Abstract :
Design, development and simulation results of an interdigitated metal-fingers capacitors in 0.18μm RF-CMOS technology that are exploiting both lateral and vertical metal-metal capacitances are presented. Two RF-CMOS capacitors are designed specifically for applications in a 2.45GHz power splitter circuit. Five metal RF-CMOS layers are used to design two capacitors of 1.39pF and 2.2pF, consisting of 101 and 105 metal fingers respectively. The real impedance obtained at the input is Z1 = 35.04Ω and Z2 = 39.73Ω, while the insertion loss is S21 = 2.47dB. Return loss S11 and S22 are simulated as 4.042dB and 4.047dB respectively. Phase measurements of 110.9° and 101.2° are obtained for the input and output ports, indicating that the phase shift is not degraded too much due to the capacitor.
Keywords :
CMOS integrated circuits; capacitance; capacitors; impedance matching; lumped parameter networks; phase measurement; phase shifters; power dividers; radiofrequency integrated circuits; RF-CMOS capacitors; RF-CMOS layers; RF-CMOS power splitters; RF-CMOS technology; capacitance 1.39 pF; capacitance 2.2 pF; frequency 2.45 GHz; insertion loss; interdigitated metal-fingers capacitors; lateral metal-metal capacitances; loss 2.47 dB; loss 4.042 dB; loss 4.047 dB; lumped element metal finger capacitor; phase measurements; phase shift; power splitter circuit; real impedance; resistance 35.04 ohm; resistance 39.73 ohm; size 0.18 mum; vertical metal-metal capacitances; Capacitors;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5774736
