Electrical properties of polycrystalline p-CuxO MOS capacitors with SiO2/HfO2 high κ stack gate dielectric on silicon substrate

Polycrystalline p-type Cu_xO film was deposited after growth of HfO₂ dielectric on Si substrate by pulsed laser deposition, and Cu_xO MOS capacitors with SiO₂/HfO₂ stack gate dielectric have been primarily fabricated and investigated. Results of measurements indicate that capacitance equivalent thickness and equivalent κ-value of SiO₂/HfO₂ stack dielectric for post-deposition annealing (PDA) sample are 4.78 nm and 10.2 respectively, and gate leakage current density is ˜10^-4 A/cm₂ at V_g = -1 V. Results also show that PDA can improve quality of interface and reduce gate leakage.