DocumentCode
3225913
Title
High-performance 3D-SRAM architecture design
Author
Hsu, Chun-Lung ; Wu, Ching-Fen
Author_Institution
Dept. of Electr. Eng., National Dong Hwa Univ., Hualien, Taiwan
fYear
2010
fDate
6-9 Dec. 2010
Firstpage
907
Lastpage
910
Abstract
A high-performance three-dimension (3D) static random access memory (SRAM) architecture design is presented in this paper. The emerging 3D integration technology involves stacking two or more die connected with a very high density and low latency interface. By using array splitting and bank stacking approaches, the wire length of the proposed 3D SRAM architecture design can be effectively reduced resulting in latency and energy reduction benefits. Performance evaluation results show that about 35.8% latency reduction and 29.4% energy saving can be achieved for a 16MB 4-layer stacked 3D SRAM array. With different sizes of a SRAM array, the proposed 3D architecture has also demonstrated great improvement in latency and energy over the conventional 2D design.
Keywords
SRAM chips; performance evaluation; three-dimensional integrated circuits; 3D integration technology; 3D-SRAM architecture design; array splitting approach; bank stacking approach; density interface; die stacking; energy reduction benefit; latency interface; latency reduction benefit; memory size 16 MByte; performance evaluation; three-dimension static random access memory architecture design; wire length; Arrays; Decoding; Random access memory; Stacking; Three dimensional displays; Wires; 3D SRAM; High-performance; energy consumption; latency;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-7454-7
Type
conf
DOI
10.1109/APCCAS.2010.5774741
Filename
5774741
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