• DocumentCode
    3225913
  • Title

    High-performance 3D-SRAM architecture design

  • Author

    Hsu, Chun-Lung ; Wu, Ching-Fen

  • Author_Institution
    Dept. of Electr. Eng., National Dong Hwa Univ., Hualien, Taiwan
  • fYear
    2010
  • fDate
    6-9 Dec. 2010
  • Firstpage
    907
  • Lastpage
    910
  • Abstract
    A high-performance three-dimension (3D) static random access memory (SRAM) architecture design is presented in this paper. The emerging 3D integration technology involves stacking two or more die connected with a very high density and low latency interface. By using array splitting and bank stacking approaches, the wire length of the proposed 3D SRAM architecture design can be effectively reduced resulting in latency and energy reduction benefits. Performance evaluation results show that about 35.8% latency reduction and 29.4% energy saving can be achieved for a 16MB 4-layer stacked 3D SRAM array. With different sizes of a SRAM array, the proposed 3D architecture has also demonstrated great improvement in latency and energy over the conventional 2D design.
  • Keywords
    SRAM chips; performance evaluation; three-dimensional integrated circuits; 3D integration technology; 3D-SRAM architecture design; array splitting approach; bank stacking approach; density interface; die stacking; energy reduction benefit; latency interface; latency reduction benefit; memory size 16 MByte; performance evaluation; three-dimension static random access memory architecture design; wire length; Arrays; Decoding; Random access memory; Stacking; Three dimensional displays; Wires; 3D SRAM; High-performance; energy consumption; latency;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-7454-7
  • Type

    conf

  • DOI
    10.1109/APCCAS.2010.5774741
  • Filename
    5774741