DocumentCode :
3225925
Title :
ZnO based thin-film transistor with high-κ gadolinium and praseodymium oxide as gate dielectric
Author :
Wang, Hsiang-Chun ; Lin, Che-Kai ; Chiu, Hsien-Chin ; Kuang-Po Hsueh
Author_Institution :
Dept. of Electron. Eng., Chang Gung Univ., Taoyuan, Taiwan
fYear :
2009
fDate :
25-27 Dec. 2009
Firstpage :
205
Lastpage :
208
Abstract :
In this work, we compare the electrical and radio frequency characteristics of top-gate ZnO TFTs with praseodymium oxide layer (Pr2O3) and Gadolinium oxide layer (Gd2O3). The source/drain region of ZnO thin-film transistor is treated by simple O2 plasma instead of complicated processes, such as ion implantation and activation. By O2 plasma treatment, the source/drain series resistance successfully reduced. With Pr2O3 and Gd2O3, high dielectric constant (high-κ) insulator gate dielectrics, gate leakage current, On/OFF current ratio, and radio frequency performance successfully improved to their use for portable, battery powered, and circuit design applications. The coupling of the gate electric field is enhanced by using high-κ gate dielectrics.
Keywords :
II-VI semiconductors; gadolinium compounds; high-k dielectric thin films; ion implantation; leakage currents; permittivity; plasma materials processing; praseodymium compounds; thin film transistors; zinc compounds; O2 plasma treatment; On-OFF current ratio; ZnO-Pr2O3-Gd2O3; battery powered design application; circuit design application; gadolinium oxide layer; gate electric field; gate leakage current; high dielectric constant insulator gate dielectrics; high-κ gadolinium oxide; ion implantation; praseodymium oxide layer; radio frequency characteristics; source-drain region; thin-film transistor; Batteries; Dielectrics and electrical insulation; High-K gate dielectrics; Ion implantation; Leakage current; Plasma immersion ion implantation; Plasma sources; Radio frequency; Thin film transistors; Zinc oxide;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
Type :
conf
DOI :
10.1109/EDSSC.2009.5394282
Filename :
5394282
Link To Document :
بازگشت