Title :
Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y2O3 gate dielectric
Author :
Li, C.X. ; Xu, H.X. ; Xu, J.P. ; Lai, P.T.
Author_Institution :
Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China
Abstract :
In this work, Ge MOS capacitors with Y2O3 gate dielectric were fabricated. The effects of annealing in N2, NH3 O2 or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y2O3 dielectric. On the other hand, the NH3 annealing resulted in H-related traps while the O2 annealing suffered from extra GeOx growth, thus both degrading the performance of the devices.
Keywords :
MOS capacitors; annealing; dielectric properties; semiconductor device reliability; yttrium compounds; Ge MOS capacitors; Y2O3; annealing; electrical properties; gas species; gate dielectric; reliability; Annealing; Capacitance; Capacitance-voltage characteristics; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOS capacitors; MOS devices; Nitrogen; Surface morphology;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394284
