Effects of annealing gas species on the electrical properties and reliability of Ge MOS capacitors with high-k Y2O3 gate dielectric

Author

Li, C.X. ; Xu, H.X. ; Xu, J.P. ; Lai, P.T.

Author_Institution

Dept. of Electr. & Electron. Eng., Univ. of Hong Kong, Hong Kong, China

fYear

2009

fDate

25-27 Dec. 2009

Firstpage

243

Lastpage

246

Abstract

In this work, Ge MOS capacitors with Y₂O₃ gate dielectric were fabricated. The effects of annealing in N₂, NH₃ O₂ or NO ambient were investigated. Experimental results demonstrated that the NO annealing could improve both electrical properties and reliability of Ge MOS devices with Y₂O₃ dielectric. On the other hand, the NH₃ annealing resulted in H-related traps while the O₂ annealing suffered from extra GeO_x growth, thus both degrading the performance of the devices.

Keywords

MOS capacitors; annealing; dielectric properties; semiconductor device reliability; yttrium compounds; Ge MOS capacitors; Y₂O₃; annealing; electrical properties; gas species; gate dielectric; reliability; Annealing; Capacitance; Capacitance-voltage characteristics; Dielectric substrates; High K dielectric materials; High-K gate dielectrics; MOS capacitors; MOS devices; Nitrogen; Surface morphology;

fLanguage

English

Publisher

ieee

Conference_Titel

Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of

Conference_Location

Xi´an

Print_ISBN

978-1-4244-4297-3

Electronic_ISBN

978-1-4244-4298-0

Type

conf

DOI

10.1109/EDSSC.2009.5394284

Filename

5394284