Title :
An additional contribution in the noise spectrum of SOI MOSFETs
Author :
Faccio, F. ; Aspell, P. ; Jarron, P. ; Heijne, E.H.
Author_Institution :
CERN, Geneva, Switzerland
fDate :
30 Sep-3 Oct 1996
Abstract :
In view of possible analog applications, we have studied the noise characteristics of a medium-thickness SOI technology in the 200 Hz-25 MHz bandwidth. We have found an additional noise contribution in the form of a hump in the noise spectrum, which can be moved widely in frequency and amplitude by changing the transistor bias. In this paper we present our hypothesis concerning its origin, and some measurements that support our interpretation
Keywords :
MOSFET; elemental semiconductors; semiconductor device models; semiconductor device noise; silicon; silicon-on-insulator; 200 Hz to 25 MHz; MOSFETs; Si; additional noise contribution; medium-thickness SOI technology; noise spectrum; transistor bias; Electrical resistance measurement; Filters; Frequency; Immune system; MOSFETs; Noise figure; Noise measurement; Thermal resistance; Voltage; White noise;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552468
