DocumentCode
3225973
Title
An additional contribution in the noise spectrum of SOI MOSFETs
Author
Faccio, F. ; Aspell, P. ; Jarron, P. ; Heijne, E.H.
Author_Institution
CERN, Geneva, Switzerland
fYear
1996
fDate
30 Sep-3 Oct 1996
Firstpage
9
Lastpage
10
Abstract
In view of possible analog applications, we have studied the noise characteristics of a medium-thickness SOI technology in the 200 Hz-25 MHz bandwidth. We have found an additional noise contribution in the form of a hump in the noise spectrum, which can be moved widely in frequency and amplitude by changing the transistor bias. In this paper we present our hypothesis concerning its origin, and some measurements that support our interpretation
Keywords
MOSFET; elemental semiconductors; semiconductor device models; semiconductor device noise; silicon; silicon-on-insulator; 200 Hz to 25 MHz; MOSFETs; Si; additional noise contribution; medium-thickness SOI technology; noise spectrum; transistor bias; Electrical resistance measurement; Filters; Frequency; Immune system; MOSFETs; Noise figure; Noise measurement; Thermal resistance; Voltage; White noise;
fLanguage
English
Publisher
ieee
Conference_Titel
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location
Sanibel Island, FL
ISSN
1078-621X
Print_ISBN
0-7803-3315-2
Type
conf
DOI
10.1109/SOI.1996.552468
Filename
552468
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