Electrically measuring the peak channel temperature of power GaAs MESFET

Author

Wang, M.Z. ; Lu, C.Z. ; Cheng, Z.H. ; Wang, Z. ; Feng, S.W. ; Ding, G.Y. ; Li, X.X. ; Gao, G.B.

Author_Institution

Dept. of Electron. Eng., Beijing Polytech. Univ., China

fYear

1993

fDate

2-4 Feb 1993

Firstpage

112

Lastpage

116

Abstract

A method for electrically determining the peak channel temperature of GaAs MESFETs is presented. It is the combination of an electrical technique based on the temperature-sensitive electrical parameter (TSEP) with the numerical simulation approach of A.G. Kokkas´s (1974) thermal model. The peak channel temperature, measured electrically, is slightly higher than the maximum temperature obtained by the IR method. The effect of the resolution on the precision of the measurement technique is numerically analyzed. The electrical technique is not only shown to have advantages such as nondestructiveness, low cost, and easy operation, but also exhibits no limitation on the spatial resolution and higher accuracy

Keywords

III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; power transistors; semiconductor device models; temperature measurement; GaAs; III-V semiconductors; MESFETs; electrical technique; nondestructiveness; peak channel temperature; power transistors; resolution; temperature-sensitive electrical parameter; thermal model; Current measurement; Electric variables measurement; Gallium arsenide; MESFETs; Measurement techniques; Power measurement; Spatial resolution; Temperature measurement; Temperature sensors; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Semiconductor Thermal Measurement and Management Symposium, 1993. SEMI-THERM IX., Ninth Annual IEEE

Conference_Location

Austin, TX

Print_ISBN

0-7803-0863-8

Type

conf

DOI

10.1109/STHERM.1993.225324

Filename

225324