Title :
Reliability improvement of HfO2/SiON gate stacked nMOSFET using fluorinated silicate glass passivation layer
Author :
Hsieh, Chih-Ren ; Chen, Yung-Yu ; Chung, Jer-Fu ; Lou, Jen-Chung
Author_Institution :
Inst. of Electron., Nat. Chiao-Tung Univ., Hsinchu, Taiwan
Abstract :
In this paper, the reliability of the fluorinated hafnium oxide (HfO2) gate dielectric using novel and CMOS compatible fluorinated silicate glass (FSG) process has been studied comprehensively for the first time. Due to dangling bonds and oxygen vacancies recovery by the fluorine atoms, higher transconductance, smaller stress-induced threshold voltage and interface state degradation are therefore obtained for the fluorinated HfO2/SiON gate stack.
Keywords :
CMOS integrated circuits; MOSFET; hafnium compounds; integrated circuit reliability; silicon compounds; CMOS compatible fluorinated silicate glass process; HfO2-SiON; dangling bonds; fluorine atoms; gate stacked nMOSFET; interface state degradation; oxygen vacancies recovery; reliability improvement; stress-induced threshold voltage; Chemical vapor deposition; Dielectric devices; Dielectric substrates; Glass; Hafnium oxide; Interface states; MOSFET circuits; Passivation; Semiconductor films; Threshold voltage; FSG; HfO2; fluorine;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394287
