Title :
HfO2 inter-poly dielectric characteristics with interface fluorine passivation
Author :
Chen, Yung-Yu ; Hsieh, Chih-Ren ; Lu, Kwung-Wen ; Lou, Jen-Chung
Author_Institution :
Dept. of Electron. Eng., Lunghwa Univ. of Sci. & Technol., Taoyuan, Taiwan
Abstract :
In this paper, the reliabilities and insulating characteristics of the fluorinated hafnium oxide (HfO2) inter-poly dielectric (IPD) through fluorine ion implantation are studied for the first time. HfO2 IPD characteristics are strongly dependent on the fluorine implantation dosage. Due to the terminating dangling bonds and oxygen vacancies, reducing interface oxidation and smoothing interface roughness, optimized fluorinated HfO2 can be used to drastically improve the IPD reliabilities; consequently, this study concludes that fluorinated HfO2 IPD is suitable for mass production applications in the future stacked-gate flash memory technology.
Keywords :
dielectric materials; flash memories; hafnium compounds; ion implantation; passivation; HfO2; fluorinated hafnium oxide; fluorine ion implantation; inter-poly dielectric characteristics; interface fluorine passivation; interface oxidation; interface roughness smoothing; oxygen vacancies; stacked-gate flash memory technology; Capacitors; Chemical vapor deposition; Dielectric constant; Dielectric losses; Flash memory; Hafnium oxide; Leakage current; Nonvolatile memory; Optimized production technology; Passivation; HfO2; flash memory; fluorine;
Conference_Titel :
Electron Devices and Solid-State Circuits, 2009. EDSSC 2009. IEEE International Conference of
Conference_Location :
Xi´an
Print_ISBN :
978-1-4244-4297-3
Electronic_ISBN :
978-1-4244-4298-0
DOI :
10.1109/EDSSC.2009.5394289
