Title :
Electron mobility in nMOSFETs/SIMOX with a 2-nm-thick silicon layer
Author :
Nakajima, Yasuyuki ; Omura, Yasuhisa
Author_Institution :
NTT LSI Labs., Atsugi, Japan
fDate :
30 Sep-3 Oct 1996
Abstract :
This paper demonstrates conductance characteristics and electron mobility properties in nMOSFETs/SIMOX with a 2-nm-thick silicon layer and a 2-nm-thick gate oxide layer based on both semi-classical and quantum-mechanical considerations. The results are quite significant because manufacturers will not encounter serious obstacles in future extremely thin SOI devices, and because the improvement of interface property should bring about greater enhanced electron mobility
Keywords :
MOSFET; SIMOX; characteristics measurement; electron mobility; elemental semiconductors; silicon; 2 nm; SIMOX; Si; conductance characteristics; electron mobility; gate oxide layer; interface property; nMOSFETs; quantum-mechanical considerations; semi-classical considerations; thin SOI devices; Capacitance; Electron mobility; Fabrication; Laboratories; Large scale integration; MOSFETs; Rough surfaces; Silicon; Surface roughness; Transmission electron microscopy;
Conference_Titel :
SOI Conference, 1996. Proceedings., 1996 IEEE International
Conference_Location :
Sanibel Island, FL
Print_ISBN :
0-7803-3315-2
DOI :
10.1109/SOI.1996.552469
