DocumentCode :
3226271
Title :
Structure and electrical properties of Ho-modified Sr2Bi4Ti5O18 Lead-free piezoelectric ceramics
Author :
Chen, Mingli ; Xu, Zhijun ; Chu, Ruiqing ; Liu, Yang ; Mingli Chen ; Shao, Lin ; Li, Guorong
Author_Institution :
Coll. of Mater. Sci. & Eng., Liaocheng Univ., Liaocheng, China
fYear :
2011
fDate :
24-27 July 2011
Firstpage :
1
Lastpage :
4
Abstract :
Bismuth layer-structured Sr2Bi4-xHoxTi5O18 (x = 0.0, 0.1, 0.2, 0.3) ceramics were prepared by solid state reaction. X-ray diffraction pattern showed that pure bismuth-layered structure of SBTi was not affected by Ho-doping. SEM images showed that dense microstructures with uniform gain size were obtained in all samples. Dielectric, ferroelectric and piezoelectric properties of Sr2Bi4-xHoxTi5O18 ceramics were also investigated. Results showed that Ho-doping caused the Curie temperature of SBTi ceramics to shift to lower temperature and decreased the dielectric loss. In addition, the remnant polarization and the piezoelectric constant decreased with the increasing of Ho-doping content.
Keywords :
X-ray diffraction; bismuth compounds; densification; dielectric hysteresis; dielectric losses; dielectric polarisation; ferroelectric Curie temperature; ferroelectric ceramics; grain growth; holmium compounds; materials preparation; permittivity; piezoceramics; remanence; scanning electron microscopy; strontium compounds; Curie temperature; SEM; Sr2Bi4-xHoxTi5O18; X-ray diffraction; bismuth layer structured; ceramics; dense microstructure; dielectric loss; dielectric properties; electrical properties; ferroelectric hysteresis loops; ferroelectric properties; grain growth; holmium doping; piezoelectric constant; piezoelectric properties; remnant polarization; scanning electron microscopy; solid state reaction; structural properties; Dielectrics; Educational institutions; Electrodes; Lead; Piezoelectric polarization; X-ray imaging; X-ray scattering; Dielectric properties; Ferroelectric properties; Piezoelectric properties; SBTi-Hox;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Applications of Ferroelectrics (ISAF/PFM), 2011 International Symposium on and 2011 International Symposium on Piezoresponse Force Microscopy and Nanoscale Phenomena in Polar Materials
Conference_Location :
Vancouver, BC
Print_ISBN :
978-1-4577-1162-6
Electronic_ISBN :
978-1-4577-1161-9
Type :
conf
DOI :
10.1109/ISAF.2011.6014004
Filename :
6014004
Link To Document :
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