DocumentCode
3226460
Title
Essentials of SOI technology for small power supply applications
Author
Perlinger, Adam ; Buck, Kevin M. ; Li, Harry W. ; Hess, Herbert L.
Author_Institution
Microelectron. Res. & Commun. Inst., Idaho Univ., Moscow, ID, USA
Volume
3
fYear
2004
fDate
2-6 Nov. 2004
Firstpage
3227
Abstract
The relationship between that of silicon-on-insulator (SOI) technology and ordinary CMOS is presented followed with an examination of the basic features of MOSFETs fabricated under the SOI process. Such features include the intrinsic junction diodes, diffusion capacitance, floating-body effect, internal parasitic bipolar effects, the insulation layer and its consequences, and the self-heating effect. In addition to the fact that many of these features provide improvements in transistor design and performance over standard CMOS, SOI technology is poised to become competitive for small power supply applications.
Keywords
CMOS integrated circuits; MOSFET; capacitance; power supply circuits; semiconductor diodes; silicon-on-insulator; CMOS; MOSFET; diffusion capacitance; floating-body effect; insulation layer; internal parasitic bipolar effect; intrinsic junction diode; self-heating effect; silicon-on-insulator; small power supply; transistor design; CMOS process; CMOS technology; Insulation; MOSFETs; Microelectronics; Parasitic capacitance; Power supplies; Semiconductor diodes; Silicon on insulator technology; Threshold voltage;
fLanguage
English
Publisher
ieee
Conference_Titel
Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE
Print_ISBN
0-7803-8730-9
Type
conf
DOI
10.1109/IECON.2004.1432331
Filename
1432331
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