• DocumentCode
    3226460
  • Title

    Essentials of SOI technology for small power supply applications

  • Author

    Perlinger, Adam ; Buck, Kevin M. ; Li, Harry W. ; Hess, Herbert L.

  • Author_Institution
    Microelectron. Res. & Commun. Inst., Idaho Univ., Moscow, ID, USA
  • Volume
    3
  • fYear
    2004
  • fDate
    2-6 Nov. 2004
  • Firstpage
    3227
  • Abstract
    The relationship between that of silicon-on-insulator (SOI) technology and ordinary CMOS is presented followed with an examination of the basic features of MOSFETs fabricated under the SOI process. Such features include the intrinsic junction diodes, diffusion capacitance, floating-body effect, internal parasitic bipolar effects, the insulation layer and its consequences, and the self-heating effect. In addition to the fact that many of these features provide improvements in transistor design and performance over standard CMOS, SOI technology is poised to become competitive for small power supply applications.
  • Keywords
    CMOS integrated circuits; MOSFET; capacitance; power supply circuits; semiconductor diodes; silicon-on-insulator; CMOS; MOSFET; diffusion capacitance; floating-body effect; insulation layer; internal parasitic bipolar effect; intrinsic junction diode; self-heating effect; silicon-on-insulator; small power supply; transistor design; CMOS process; CMOS technology; Insulation; MOSFETs; Microelectronics; Parasitic capacitance; Power supplies; Semiconductor diodes; Silicon on insulator technology; Threshold voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Industrial Electronics Society, 2004. IECON 2004. 30th Annual Conference of IEEE
  • Print_ISBN
    0-7803-8730-9
  • Type

    conf

  • DOI
    10.1109/IECON.2004.1432331
  • Filename
    1432331