Title :
Nanotransistors using graphene interfaced with advanced dielectrics for high speed communication
Author :
Nayfeh, Osama M. ; Kim, Ki Kang ; Kong, Jing
Abstract :
The design fabrication, characterization and modeling of high speed nanotransistors based on large-area atomically thin CVD graphene are presented. Interfacing of the graphene for the first time with advanced dielectrics, such as (piezo) AlN for enhanced performance, and techniques for the direct atomic layer deposition of high-k dielectrics for efficient gate-coupling are also presented. Lastly, novel advanced device concepts and circuits that exploit its tunable property are discussed.
Keywords :
chemical vapour deposition; dielectric materials; graphene; nanoelectronics; transistors; AlN; atomic layer deposition; gate-coupling; high speed communication; high-k dielectrics; nanotransistor; thin CVD graphene; Aluminum oxide; Atomic layer deposition; Current measurement; Dielectric measurements; Dielectrics; Frequency measurement; Logic gates; dielectrics; graphene; nanotransistors; radiofrequency;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144437
