DocumentCode
3226869
Title
Nanotransistors using graphene interfaced with advanced dielectrics for high speed communication
Author
Nayfeh, Osama M. ; Kim, Ki Kang ; Kong, Jing
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1572
Lastpage
1574
Abstract
The design fabrication, characterization and modeling of high speed nanotransistors based on large-area atomically thin CVD graphene are presented. Interfacing of the graphene for the first time with advanced dielectrics, such as (piezo) AlN for enhanced performance, and techniques for the direct atomic layer deposition of high-k dielectrics for efficient gate-coupling are also presented. Lastly, novel advanced device concepts and circuits that exploit its tunable property are discussed.
Keywords
chemical vapour deposition; dielectric materials; graphene; nanoelectronics; transistors; AlN; atomic layer deposition; gate-coupling; high speed communication; high-k dielectrics; nanotransistor; thin CVD graphene; Aluminum oxide; Atomic layer deposition; Current measurement; Dielectric measurements; Dielectrics; Frequency measurement; Logic gates; dielectrics; graphene; nanotransistors; radiofrequency;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144437
Filename
6144437
Link To Document