Cathodoluminescence investigation of stress-induced beryllium outdiffusion in AlGaAs/GaAs HBTs

Author

Cattani, Laura ; Salviati, Giancarlo ; Borgarino, Mattia ; Menozzi, Roberto ; Fantini, Fausto ; Lazzarini, Laura ; Fregonara, Carlo Zanotti

Author_Institution

Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy

fYear

1997

fDate

24-25 Nov 1997

Firstpage

49

Lastpage

54

Abstract

In this study cathodoluminescence spectroscopy has been used for the first time in order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results provide evidence for base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism may be responsible. Therefore, cathodoluminescence can be used as a nondestructive technique to study beryllium outdiffusion

Keywords

III-V semiconductors; aluminium compounds; beryllium; cathodoluminescence; diffusion; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device reliability; semiconductor device testing; AlGaAs-GaAs:Be; AlGaAs/GaAs:Be HBTs; REID mechanism; base dopant outdiffusion; cathodoluminescence spectroscopy; current stress; nondestructive technique; recombination enhanced impurity diffusion; reliability; stress-induced Be outdiffusion; Acceleration; Electron beams; Energy resolution; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Scanning electron microscopy; Spectroscopy; Stress; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668505

Filename

668505