Title :
Cathodoluminescence investigation of stress-induced beryllium outdiffusion in AlGaAs/GaAs HBTs
Author :
Cattani, Laura ; Salviati, Giancarlo ; Borgarino, Mattia ; Menozzi, Roberto ; Fantini, Fausto ; Lazzarini, Laura ; Fregonara, Carlo Zanotti
Author_Institution :
Dipt. di Ingegneria dell´´Inf., Parma Univ., Italy
Abstract :
In this study cathodoluminescence spectroscopy has been used for the first time in order to detect the base dopant outdiffusion induced by current stress in AlGaAs/GaAs Be-doped HBTs. The results provide evidence for base dopant diffusion along the growth direction of the HBT structure and suggest that the REID mechanism may be responsible. Therefore, cathodoluminescence can be used as a nondestructive technique to study beryllium outdiffusion
Keywords :
III-V semiconductors; aluminium compounds; beryllium; cathodoluminescence; diffusion; electron-hole recombination; gallium arsenide; heterojunction bipolar transistors; microwave bipolar transistors; semiconductor device reliability; semiconductor device testing; AlGaAs-GaAs:Be; AlGaAs/GaAs:Be HBTs; REID mechanism; base dopant outdiffusion; cathodoluminescence spectroscopy; current stress; nondestructive technique; recombination enhanced impurity diffusion; reliability; stress-induced Be outdiffusion; Acceleration; Electron beams; Energy resolution; Gallium arsenide; Heterojunction bipolar transistors; Molecular beam epitaxial growth; Scanning electron microscopy; Spectroscopy; Stress; Temperature;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668505
