Title :
Effect of annealing on ZnO nanowires grown at low temperature
Author :
Nadarajah, Athavan ; Rouvimov, Sergei ; Könenkamp, Rolf
Author_Institution :
Dept. of Phys., Portland State Univ., Portland, OR, USA
Abstract :
Our research demonstrates that thermal and pulsed laser annealing improve the structural and optical properties of ZnO nanowire films grown electrochemically from aqueous electrolytes at a temperature below 90°C. The structural and optical properties of the grown ZnO nanowires were characterized by transmission electron microscopy and by their photo- and electroluminescence. Our results indicate that the as-grown nanowire structures have considerable internal lattice strain. However, moderate thermal annealing and laser annealing induce strain relaxation, considerably improving optical and electrical properties, and thereby allowing the fabrication of devices, such as solar cells and light emitting diodes.
Keywords :
II-VI semiconductors; electroluminescence; internal stresses; laser beam annealing; nanofabrication; nanowires; photoluminescence; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; zinc compounds; ZnO; ZnO nanowire films; aqueous electrolytes; device fabrication; electrical properties; electroluminescence; internal lattice strain; light emitting diodes; moderate thermal annealing; nanowire structures; optical properties; photoluminescence; pulsed laser annealing; solar cells; strain relaxation; structural properties; transmission electron microscopy; Annealing; Lasers; Nanowires; Optical films; Photoluminescence; Zinc oxide;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144444