DocumentCode
3227233
Title
A qualitative comparison of energy band gap equations with a focus on temperature and its effect on CNTFETs
Author
Torres, Jesus A. ; Huq, Hasina F.
Author_Institution
Dept. of Electr. Eng., Univ. of Texas-Pan American, Edinburg, TX, USA
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1102
Lastpage
1105
Abstract
The role of temperature in semiconductors has been established as a contributing factor in affecting the energy band gap. However, the temperature in Carbon nanotube field effect transistors (CNTFETs) is said to be negligible and can be ignored as stated in [1]. An investigation on how the temperature would affect these devices is investigated by comparing different equations with a set of various parameters.
Keywords
carbon nanotube field effect transistors; energy gap; CNTFET; carbon nanotube field effect transistors; energy band gap equations; CNTFETs; Carbon nanotubes; Equations; Mathematical model; Photonic band gap; Temperature; Temperature dependence; Ballistic MOSFET; band gap; device simulation; temperature effects;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144454
Filename
6144454
Link To Document