Title :
On the rule of thumb for flipping the dispersion relation in BAW devices
Author :
Jose, S. ; Hueting, R.J.E. ; Jansman, A.B.M.
Author_Institution :
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
Abstract :
High-performance solidly mounted bulk acoustic wave resonators (SMRs) can be obtained by employing frame region, if these exhibit type I dispersion. The commonly used piezoelectric material Aluminum Nitride is a type II material, for which type I dispersion can be enforced by increasing the top low-acoustic-impedance (silicon dioxide) layer thickness of the mirror. However a criterion for flipping was not investigated. In this work we propose a rule of thumb for flipping dispersion curves, applicable for FBARs and SMRs.
Keywords :
aluminium compounds; bulk acoustic wave devices; crystal resonators; dispersion relations; piezoelectric materials; BAW devices; FBAR; SMR; aluminum nitride; dispersion relation; low-acoustic-impedance; piezoelectric material; rule of thumb; solidly mounted bulk acoustic wave resonators; Acoustics; Aluminum Nitride; Bulk Acoustic Wave; Dispersion; SMR; Thickness shear resonance; rule of thumb;
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1253-1
DOI :
10.1109/ULTSYM.2011.0427
