DocumentCode
3227236
Title
On the rule of thumb for flipping the dispersion relation in BAW devices
Author
Jose, S. ; Hueting, R.J.E. ; Jansman, A.B.M.
Author_Institution
MESA+ Inst. for Nanotechnol., Univ. of Twente, Enschede, Netherlands
fYear
2011
fDate
18-21 Oct. 2011
Firstpage
1712
Lastpage
1715
Abstract
High-performance solidly mounted bulk acoustic wave resonators (SMRs) can be obtained by employing frame region, if these exhibit type I dispersion. The commonly used piezoelectric material Aluminum Nitride is a type II material, for which type I dispersion can be enforced by increasing the top low-acoustic-impedance (silicon dioxide) layer thickness of the mirror. However a criterion for flipping was not investigated. In this work we propose a rule of thumb for flipping dispersion curves, applicable for FBARs and SMRs.
Keywords
aluminium compounds; bulk acoustic wave devices; crystal resonators; dispersion relations; piezoelectric materials; BAW devices; FBAR; SMR; aluminum nitride; dispersion relation; low-acoustic-impedance; piezoelectric material; rule of thumb; solidly mounted bulk acoustic wave resonators; Acoustics; Aluminum Nitride; Bulk Acoustic Wave; Dispersion; SMR; Thickness shear resonance; rule of thumb;
fLanguage
English
Publisher
ieee
Conference_Titel
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location
Orlando, FL
ISSN
1948-5719
Print_ISBN
978-1-4577-1253-1
Type
conf
DOI
10.1109/ULTSYM.2011.0427
Filename
6293267
Link To Document