Title :
Simulation of optically biased, edge coupled InP/InGaAs phototransistors
Author :
Woods, S.J. ; Walker, Alison B. ; Wake, D.
Author_Institution :
Sch. of Phys., East Anglia Univ., Norwich, UK
Abstract :
A theoretical investigation has been made of an optically biased, two terminal InP/In0.33Ga0.47As photo-heterojunction bipolar transistor, using drift diffusion and Monte Carlo models. Comparisons have been made using both models with experimental data for two device structures. Good agreement has been found between the drift diffusion model and experiment for the optical gain, but poorer agreement with the cutoff frequency and current-voltage characteristics. Results from the Monte Carlo model show that discrepancies between the drift-diffusion results and experimental current-voltage characteristics are likely to be due to hot electron effects within the devices
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; phototransistors; semiconductor device models; InP-In0.33Ga0.47As; Monte Carlo simulation; current-voltage characteristics; cutoff frequency; drift diffusion model; hot electron effects; optical gain; optically biased edge coupled InP/InGaAs phototransistor; two terminal photo-heterojunction bipolar transistor; Charge carrier processes; Cutoff frequency; Electron optics; Indium gallium arsenide; Indium phosphide; Monte Carlo methods; Optical coupling; Optical devices; Phototransistors; Poisson equations;
Conference_Titel :
High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on
Conference_Location :
London
Print_ISBN :
0-7803-4135-X
DOI :
10.1109/EDMO.1997.668600
