Simulation of optically biased, edge coupled InP/InGaAs phototransistors

Author

Woods, S.J. ; Walker, Alison B. ; Wake, D.

Author_Institution

Sch. of Phys., East Anglia Univ., Norwich, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

205

Lastpage

210

Abstract

A theoretical investigation has been made of an optically biased, two terminal InP/In_0.33Ga_0.47As photo-heterojunction bipolar transistor, using drift diffusion and Monte Carlo models. Comparisons have been made using both models with experimental data for two device structures. Good agreement has been found between the drift diffusion model and experiment for the optical gain, but poorer agreement with the cutoff frequency and current-voltage characteristics. Results from the Monte Carlo model show that discrepancies between the drift-diffusion results and experimental current-voltage characteristics are likely to be due to hot electron effects within the devices

Keywords

III-V semiconductors; Monte Carlo methods; gallium arsenide; heterojunction bipolar transistors; hot carriers; indium compounds; phototransistors; semiconductor device models; InP-In_0.33Ga_0.47As; Monte Carlo simulation; current-voltage characteristics; cutoff frequency; drift diffusion model; hot electron effects; optical gain; optically biased edge coupled InP/InGaAs phototransistor; two terminal photo-heterojunction bipolar transistor; Charge carrier processes; Cutoff frequency; Electron optics; Indium gallium arsenide; Indium phosphide; Monte Carlo methods; Optical coupling; Optical devices; Phototransistors; Poisson equations;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668600

Filename

668600