Effect of base metal contacts on the performance of InGaP/GaAs HBTs under temperature and bias stress

Author

Bashar, S.A. ; Sheng, H. ; Amin, F.A. ; Rezazadeh, A.A. ; Crouch, MA ; Adami, F. ; Cattani, L.

Author_Institution

Dept. of Electron. Eng., King´´s Coll., London, UK

fYear

1997

fDate

24-25 Nov 1997

Firstpage

285

Lastpage

290

Abstract

A wide range of base ohmic contacts have been studied to determine each of their suitability for usage in InGaP/GaAs HBTs for operation at high temperature. A novel base ohmic contact using Ti/ZrB₂/Au has been developed with ZrB₂ as a barrier layer to prevent Au indiffusion from the contact layer to the base region. Current stress at high temperature on these HBTs show that the devices with this novel contact remain unchanged beyond 20 hours whereas devices with conventional contacts show clear signs of degradation after only a few hours of stress

Keywords

III-V semiconductors; diffusion barriers; gallium arsenide; gallium compounds; heterojunction bipolar transistors; indium compounds; ohmic contacts; semiconductor device metallisation; InGaP-GaAs; InGaP/GaAs HBTs; Ti-ZrB₂-Au; ZrB₂ barrier layer; base metal contacts; bias stress; current stress; high temperature; ohmic contact; temperature stress; Annealing; Carbon dioxide; Gallium arsenide; Geometry; Gold; Heterojunction bipolar transistors; MOCVD; Silicon; Temperature; Testing;

fLanguage

English

Publisher

ieee

Conference_Titel

High Performance Electron Devices for Microwave and Optoelectronic Applications, 1997. EDMO. 1997 Workshop on

Conference_Location

London

Print_ISBN

0-7803-4135-X

Type

conf

DOI

10.1109/EDMO.1997.668620

Filename

668620