DocumentCode
3227477
Title
4-bit Flash Analog to Digital Converter design using CMOS-LTE Comparator
Author
Kulkarni, Meghana ; Sridhar, V. ; Kulkarni, G.H.
Author_Institution
Dept. of E & C, Gogte Inst. of Technol., Belgaum, India
fYear
2010
fDate
6-9 Dec. 2010
Firstpage
772
Lastpage
775
Abstract
This paper proposes 4-bit, 1.8V Flash Analog to Digital Converter (ADC) design using CMOS-LTE (CMOS Linear Tunable Transconductance Element) Comparator with 500nm technology. Reference voltages are generated by systematically sizing the transistors of the comparators, thus completely eliminating the resistive ladder network required for the architecture. The PSRR (Power Supply Rejection Ratio) results obtained are compared with 4-bit TIQ (Threshold Inverter Quantizer) Comparator Flash Analog to Digital Converter designed with 500nm technology. It is observed that, with the use of CMOS-LTE Comparator PSRR is improved. The DC simulation results of CMOS-LTE Comparator ADC shows DNL and INL of +0.16/-0.16 LSB and +0.16/-0.104 LSB. The total power dissipation observed is 0.28753 mW.
Keywords
CMOS integrated circuits; analogue-digital conversion; comparators (circuits); 4-bit flash analog to digital converter design; CMOS-LTE comparator; linear tunable transconductance element comparator; power 0.28753 W; power supply rejection ratio; reference voltages; resistive ladder network elimination; size 500 nm; threshold inverter quantizer; voltage 1.8 V; word length 4 bit; Binary codes; CMOS integrated circuits; Inverters; Multiplexing; Power supplies; Transconductance; Transistors; ADC; CMOS-LTE; TIQ; mux;
fLanguage
English
Publisher
ieee
Conference_Titel
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location
Kuala Lumpur
Print_ISBN
978-1-4244-7454-7
Type
conf
DOI
10.1109/APCCAS.2010.5774817
Filename
5774817
Link To Document