Title :
Highly sensitive, silicon-on-insulator nanowire based photodetector: Device optimization and analysis
Author :
Roudsari, A. Fadavi ; Li, G. ; Saini, S.S. ; O, N. ; Anantram, M.P.
Author_Institution :
Dept. of Electr. & Comput. Eng., Univ. of Waterloo, Waterloo, ON, Canada
Abstract :
We recently introduced a new phototransistor with multiple gates and a modified channel that offers a large optical gain [1]. In this work, after reviewing the proposed phototransistor, we present new results for the variation of the photo-responsivity with device dimensions.
Keywords :
nanowires; photodetectors; phototransistors; silicon-on-insulator; device analysis; device optimization; photodetector; phototransistor; silicon-on-insulator nanowire; Dark current; Lighting; Logic gates; Nanoscale devices; Performance evaluation; Photoconductivity; Photodetectors;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144475
