Title :
Room-temperature diamond seeding and microwave plasma enhanced CVD growth of nanodiamond with a tungsten interfacial layer
Author :
Chu, Yueh-Chieh ; Jiang, Gerald ; Chang, Chi ; Ting, Jyh-Ming ; Lee, Hsin-Le ; Tzeng, Yonhua
Author_Institution :
Inst. of Microelectron., Nat. Cheng Kung Univ., Tainan, Taiwan
Abstract :
This paper reports on room-temperature high-density diamond seeding for low-temperature microwave plasma enhanced chemical vapor deposition of nanocrystalline diamond (NCD) on W/Si substrates. A tungsten layer acts as a diamond nucleation-enhancing layer. Formation of tungsten-carbide (WC) complex increases the initial nucleation density and plays an important role in facilitating diamond growth characteristics. Microwave plasma-enhanced chemical vapor deposition is applied to synthesize diamond films in Ar diluted by methane without hydrogen additives at low temperature. NCD seeding and film formation were investigated as a function of the thickness of tungsten interfacial layer. Raman spectroscopy, SEM, AFM and TEM were applied to characterize NCD films in order to gain insight into the initial stage of NCD diamond synthesis.
Keywords :
Raman spectra; atomic force microscopy; diamond; elemental semiconductors; nanofabrication; nanostructured materials; nucleation; plasma CVD; scanning electron microscopy; semiconductor growth; transmission electron microscopy; wide band gap semiconductors; AFM; C; Raman spectroscopy; SEM; TEM; W-Si; W-Si substrates; diamond growth characteristics; diamond nucleation-enhancing layer; high-density diamond seeding; initial nucleation density; low-temperature microwave plasma enhanced chemical vapor deposition; methane; microwave plasma enhanced chemical vapor deposition growth; nanocrystalline diamond film formation; nanocrystalline diamond seeding; nanocrystalline diamond synthesis; nanodiamond; temperature 293 K to 298 K; tungsten interfacial layer thickness; tungsten-carbide complex formation; Diamond-like carbon; Films; Plasma temperature; Silicon; Substrates; Tungsten; nanocrystalline diamond; nucleation density; thermal management;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144477