Title :
Broad band excitation of Dy3+ emission by localized tail state absorption in chalcogenide glasses
Author :
Turnbull, D.A. ; Gu, S.Q. ; Bishop, S.G.
Author_Institution :
Microelectron. Lab., Illinois Univ., Urbana, IL, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
We have previously reported investigations of Er-doped and Pr-doped Ge33As12Se55 glasses, both of which displayed exceptionally broad rare earth photoluminescence (PL) bands. In addition, the photoluminescence excitation (PLE) spectra of both the 1640 nm Pr(3+) emission (3F→3 H4) and the 1540 nm Er3+ emission (4 I13/2→4I15/2) exhibit nearly identical broad excitation bands from ~500-1000 nm. On the basis of their line shapes, these broad PLE bands were attributed to absorption by defect- or impurity-related localized band tail states in the host glass, which then transferred their energy to the rare earth atoms. We present here a parallel investigation of Dy-doped Ge33As12Se55 glass. This is an excellent system in which to test our hypothesis concerning the origin of the broad PLE bands because the Dy atoms have a series of emissions ranging from 2800 nm to 1150 nm, all terminating in the ground slate. In addition, Dy-doped chalcogenide glasses are of technological interest because of possible application in fiber amplifiers
Keywords :
chalcogenide glasses; defect absorption spectra; dysprosium; fibre lasers; germanium compounds; ground states; impurity absorption spectra; laser transitions; photoluminescence; spectral line breadth; 2800 to 1150 nm; Dy-doped chalcogenide glasses; Dy:Ge33As12Se55; Dy3+ emission; Ge22As12Se55:Dy; broad band excitation; chalcogenide glasses; defect-related localized band tail states; fiber amplifiers; ground slate; host glass; impurity-related localized band tail states; line shapes; localized tail state absorption; photoluminescence; photoluminescence excitation; Absorption; Charge carrier processes; Energy states; Erbium; Glass; Hoses; Luminescence; Physics; Solids; Tail;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484602