Title :
Layer engineering of graphene with oxygen plasma etching
Author :
Rao, Fubo ; Li, Wen ; Dong, Lixin
Author_Institution :
Dept. of Electr. & Comput. Eng., Michigan State Univ., East Lansing, MI, USA
Abstract :
A simple and controllable method was developed to engineer the layer number of graphene based on oxygen plasma etching technique. With the optimum parameters, our so-called “one layer etching” process can be used to remove one single graphene layer at a time. As experimental demonstrations, mono-layer graphenes gotten from bi-layer graphenes and the one layer peeling of a few-layer graphene gotten from a graphite flake (~20 nm thick) were presented in this paper. This technique will open up new possibilities for making graphenes with higher efficiency than that of the commonly used mechanical exfoliation method.
Keywords :
graphene; monolayers; plasma materials processing; sputter etching; C; bilayer graphenes; graphite flake; layer engineering; layer number; mechanical exfoliation method; monolayer graphenes; one layer etching process; one layer peeling; one single graphene layer; optimum parameters; oxygen plasma etching technique; Etching; Microscopy; Optical imaging; Optical microscopy; Plasmas; Raman scattering; Graphene; layer engineering; oxygen plasma etching;
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
DOI :
10.1109/NANO.2011.6144481