DocumentCode :
3227904
Title :
The influence of the ultrasonic strain on the polarization of quantum-well heterolasers emission
Author :
Kulakova, Liudmila ; Averkiev, Nikita ; Gorelov, Vladislav
Author_Institution :
Ioffe Phys.-Tech. Inst., St. Petersburg, Russia
fYear :
2011
fDate :
18-21 Oct. 2011
Firstpage :
2165
Lastpage :
2168
Abstract :
The paper deals with an acousto-electron effect in the nanodimensional laser heterostructures. This is an ultrasonic strain-induced modulation of the hole states in the quantum well of these structures. The effect results in a modulation of the laser emission intensity as well as in a turn of the emission polarization by the sound strain. Theoretical treatment of the experimental data is presented.
Keywords :
III-V semiconductors; arsenic compounds; gallium compounds; indium compounds; light polarisation; photoluminescence; semiconductor heterojunctions; semiconductor quantum wells; ultrasonic waves; InGaAsP-InP; acousto-electron effect; emission polarization; hole states; laser emission intensity modulation; nanodimensional laser heterostructures; quantum-well heterolaser emission; sound strain; ultrasonic strain-induced modulation; Acoustics; Laser theory; Polarization; Quantum mechanics; Quantum well lasers; Strain; Acoustic-electron interaction; heterolaser emission polarization; hole states in quantum well;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
ISSN :
1948-5719
Print_ISBN :
978-1-4577-1253-1
Type :
conf
DOI :
10.1109/ULTSYM.2011.0537
Filename :
6293298
Link To Document :
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