Effect of oxidizing ambient on the generation of microdefects in low-dose SIMOX wafers

Author

Jablonski, J. ; Saito, M. ; Miyamura, Y. ; Katayama, T. ; Nakashima, S.

Author_Institution

Komatsu Electron. Metals Co. Ltd., Kanagawa, Japan

fYear

1996

fDate

30 Sep-3 Oct 1996

Firstpage

30

Lastpage

31

Abstract

Summary form only given. One of the great advantages of low-dose SIMOX wafers over the conventional high-dose SIMOX wafers is a very low density of threading dislocations formed in the top Si layer. These dislocations are often called through-thickness defects (TTD). However, TTDs are not the only lattice defects formed in SIMOX wafers. In high-dose SIMOX, in addition to TTDs, several kinds of stacking fault complexes (SFC) have been observed. The formation of such microdefects in low-dose SIMOX wafers has not been systematically analyzed yet. In this work the effect of the oxidizing ambient of the post-implantation high-temperature thermal treatment on the defect generation in the top Si layer of low-dose SIMOX wafers has been studied

Keywords

SIMOX; heat treatment; oxidation; stacking faults; Si; high-temperature thermal treatment; low-dose SIMOX wafers; microdefects generation; oxidizing ambient; post-implantation thermal treatment; stacking fault complexes; top Si layer; Annealing; Fault diagnosis; Laboratories; Large scale integration; Lattices; Oxidation; Silicon; Stacking; Temperature;

fLanguage

English

Publisher

ieee

Conference_Titel

SOI Conference, 1996. Proceedings., 1996 IEEE International

Conference_Location

Sanibel Island, FL

ISSN

1078-621X

Print_ISBN

0-7803-3315-2

Type

conf

DOI

10.1109/SOI.1996.552478

Filename

552478