• DocumentCode
    3227923
  • Title

    Effects of CNT diameter variability on a CNFET-based SRAM

  • Author

    Shahidipour, Hamed ; Zhong, Yue ; Ahmadi, Arash ; Maharatna, Koushik

  • Author_Institution
    Sch. of Electron. & Comput. Sci., Univ. of Southampton, Southampton, UK
  • fYear
    2010
  • fDate
    6-9 Dec. 2010
  • Firstpage
    971
  • Lastpage
    974
  • Abstract
    In this paper we study the effects of Single Walled Carbon Nanotube (SWCNT) diameter variations on performance and stability of 6-T SRAM cells. Parametric and Monte Carlo simulations are performed for SRAM designs based on different SWCNT mean diameters. Parameters such as read/write delays, Static Noise Margin (SNM) and Write Margin (WM) are studied together with the effects of diameter variations on them. Our results show that minimum variation of timing characteristics and noise margins can be achieved at a CNT mean diameter of 1.2nm.
  • Keywords
    Monte Carlo methods; SRAM chips; carbon nanotubes; nanotube devices; CNFET-based SRAM; Monte Carlo simulations; diameter variability; read-write delays; single walled carbon nanotube; static noise margin; write margin; CNTFETs; Carbon nanotubes; Delay; Integrated circuit modeling; Logic gates; Random access memory;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
  • Conference_Location
    Kuala Lumpur
  • Print_ISBN
    978-1-4244-7454-7
  • Type

    conf

  • DOI
    10.1109/APCCAS.2010.5774837
  • Filename
    5774837
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3227923