DocumentCode :
3227968
Title :
Reduction of hydrogen induced losses in PECVD-SiOxNy optical waveguides in the near infrared
Author :
Albers, H. ; Hilderink, L. T H ; Szilágyi, E. ; Paszti, F. ; Lambeck, P.V. ; Popma, Th J A
Author_Institution :
MESA Res. Inst., Twente Univ., Enschede, Netherlands
Volume :
2
fYear :
1995
fDate :
30 Oct-2 Nov 1995
Firstpage :
88
Abstract :
The hydrogen in PECVD-SiOxNy was studied with IR spectroscopy and ERD analysis as a function of the O/N ratio and the annealing treatment up to 1150°C. The results were compared with measured spectral waveguide losses
Keywords :
annealing; infrared spectra; optical fabrication; optical loss measurement; optical losses; optical planar waveguides; optical variables measurement; plasma CVD; silicon compounds; 1150 C; H induced losses; O/N ratio; SiOxNy; SiON; annealing treatment; optical waveguides; plasma enhanced CVD; spectral waveguide losses; Annealing; Frequency; Hydrogen; Optical films; Optical losses; Optical refraction; Optical variables control; Optical waveguides; Plasma waves; Silicon;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
Type :
conf
DOI :
10.1109/LEOS.1995.484610
Filename :
484610
Link To Document :
بازگشت