Title :
Fabrication of high frequency SAW resonators using AlN/Diamond/Si technology
Author :
Iriarte, G.F. ; Rodríguez, J.G. ; Ro, R. ; Lee, R. ; Williams, O.A. ; Araujo, D. ; Villar, M.P. ; Calle, F.
Author_Institution :
ISOM-ETSIT, Polytech. Univ. of Madrid, Madrid, Spain
Abstract :
The synthesis of AlN on diamond is a great challenge, not only because of the between an AlN/diamond interface, but also because of the high surface roughness of the diamond layers [8, 9]. In the case of microcrystalline diamond, the last problem was solved by polishing. However, polishing nanocrystalline diamond is not straightforward. For the diamond synthesis by CVD, silicon was used as a substrate. The diamond/Si interface presents a smoother diamond than the diamond/air interface. This paper reports on the fabrication of high frequency SAW resonators using AlN/Diamond/Si technology.
Keywords :
III-V semiconductors; aluminium compounds; diamond; elemental semiconductors; nanostructured materials; polishing; silicon; surface acoustic wave resonators; wide band gap semiconductors; AlN-C-Si; CVD; aluminium nitride-diamond-silicon technology; high-frequency SAW resonators; microcrystalline diamond; nanocrystalline diamond; polishing; silicon substrate; surface roughness; Diamond-like carbon; Films; Rough surfaces; Silicon; Substrates; Surface acoustic waves; Surface roughness;
Conference_Titel :
Ultrasonics Symposium (IUS), 2011 IEEE International
Conference_Location :
Orlando, FL
Print_ISBN :
978-1-4577-1253-1
DOI :
10.1109/ULTSYM.2011.0138
