Title :
Controlled growth of InP/GaInAs(P) based structures by MOCVD
Author_Institution :
Thomas Swan & Co. Ltd., Cambridge, UK
fDate :
30 Oct-2 Nov 1995
Abstract :
High quality InP/GaInAs(P) structures require precise control of bulk alloy composition and near ideal heterojunction interfaces. The paper reviews some practical solutions to growth problems which had to be overcome to meet these criteria
Keywords :
III-V semiconductors; gallium arsenide; gallium compounds; indium compounds; semiconductor epitaxial layers; semiconductor heterojunctions; semiconductor quantum wells; vapour phase epitaxial growth; InP-GaInAs; InP-GaInAsP; InP/GaInAs; InP/GaInAsP; MOCVD; bulk alloy composition; growth problems; near ideal heterojunction interfaces; reviews; Heterojunctions; Indium phosphide; Inductors; Instruments; Lattices; MOCVD; Monitoring; Reproducibility of results; Solids; Uniaxial strain;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484612
