DocumentCode
3228009
Title
A high current rate semiconducting device for pulse power application
Author
Spahn, E. ; Buderer, G. ; Ramezani, E.
Author_Institution
French-German Res. Inst., Saint-Louis, France
fYear
1997
fDate
35508
Abstract
Novel high-power thyristors with blocking capabilities of up to 6 kV and an excellent turn-on behaviour are presented in this paper for pulsed power switching applications. These devices have been investigated as closing switches for very short current pulses as they occur, e.g. with laser applications for very short pulse duration, or with electric launchers for longer pulses at very high dI/dt
Keywords
pulsed power switches; applications; blocking capabilities; closing switches; high-power thyristors; pulse duration; pulsed power switching; very short current pulses;
fLanguage
English
Publisher
iet
Conference_Titel
Pulsed Power '97 (Digest No: 1997/075), IEE Colloquium on
Conference_Location
London
Type
conf
DOI
10.1049/ic:19970423
Filename
644482
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