• DocumentCode
    3228009
  • Title

    A high current rate semiconducting device for pulse power application

  • Author

    Spahn, E. ; Buderer, G. ; Ramezani, E.

  • Author_Institution
    French-German Res. Inst., Saint-Louis, France
  • fYear
    1997
  • fDate
    35508
  • Abstract
    Novel high-power thyristors with blocking capabilities of up to 6 kV and an excellent turn-on behaviour are presented in this paper for pulsed power switching applications. These devices have been investigated as closing switches for very short current pulses as they occur, e.g. with laser applications for very short pulse duration, or with electric launchers for longer pulses at very high dI/dt
  • Keywords
    pulsed power switches; applications; blocking capabilities; closing switches; high-power thyristors; pulse duration; pulsed power switching; very short current pulses;
  • fLanguage
    English
  • Publisher
    iet
  • Conference_Titel
    Pulsed Power '97 (Digest No: 1997/075), IEE Colloquium on
  • Conference_Location
    London
  • Type

    conf

  • DOI
    10.1049/ic:19970423
  • Filename
    644482