Title :
A high current rate semiconducting device for pulse power application
Author :
Spahn, E. ; Buderer, G. ; Ramezani, E.
Author_Institution :
French-German Res. Inst., Saint-Louis, France
Abstract :
Novel high-power thyristors with blocking capabilities of up to 6 kV and an excellent turn-on behaviour are presented in this paper for pulsed power switching applications. These devices have been investigated as closing switches for very short current pulses as they occur, e.g. with laser applications for very short pulse duration, or with electric launchers for longer pulses at very high dI/dt
Keywords :
pulsed power switches; applications; blocking capabilities; closing switches; high-power thyristors; pulse duration; pulsed power switching; very short current pulses;
Conference_Titel :
Pulsed Power '97 (Digest No: 1997/075), IEE Colloquium on
Conference_Location :
London
DOI :
10.1049/ic:19970423