Title :
The transformer coupled mm-Wave CMOS Power Amplifier
Author :
Kim, Ki-Jin ; Lim, T.H. ; Ahn, K.H.
Author_Institution :
Convergence Commun. Components Res. Center, Seongnam, South Korea
Abstract :
This paper presents a novel on chip transformer coupled PA (Power Amplifier) in a 9 Metal Generic 90-nm TSMC CMOS technology for the 60 GHz mm-Wave (millimetre wave) WPAN. The PA consists of three stage CS (Common Source) amplifiers and inter-stage matching transformers. The architecture of the transformer is a stacked-structure which provides high coupling coefficient with a relatively small size. The transformer´s parameters are simulated by the 3-D electromagnetic simulator. To enhance the gain and linearity of the PA, the miller capacitance neutralized technique is adopted in this paper. The designed PA shows maximum 26.5 dB gain over 3 dB frequency 58.6 ~ 63.6 GHz. The output 1 dB compression point is 12.1 dBm, and the output saturation power is 14.46 dBm under 1.2V supply voltage. The PAE(Power Added Efficiency) of the circuit is 12.48 %. All the results of this paper are excellent comparing to previous work.
Keywords :
CMOS analogue integrated circuits; field effect MIMIC; millimetre wave power amplifiers; personal area networks; 3D electromagnetic simulation; TSMC CMOS technology; WPAN; chip transformer coupled power amplifier; common source amplifiers; frequency 60 GHz; interstage matching transformers; miller capacitance neutralized technique; output saturation power; size 90 nm; CMOS integrated circuits; Circuit faults; Current density; Gain; Power amplifiers; Power generation; Transistors; 60 GHz power amplifier; millimeter wave amplifier; on chip transformer;
Conference_Titel :
Circuits and Systems (APCCAS), 2010 IEEE Asia Pacific Conference on
Conference_Location :
Kuala Lumpur
Print_ISBN :
978-1-4244-7454-7
DOI :
10.1109/APCCAS.2010.5774841