Title :
Photoluminescence spectrum characterization of interface in the InGaAsP/InP quantum well structures
Author :
Shiyong, Liz ; Songyan, Chen ; Yudong Li ; Hongbo, Sun
Author_Institution :
State Key Lab. on Integrated Optoelectron., Jilin Univ., Changchun, China
fDate :
30 Oct-2 Nov 1995
Abstract :
To determine the alloy composition fluctuation of quaternary semiconductor interface from photoluminescence (PL) spectrum we propose a method using statistical standard deviation theory, in which alloy size radius is key factor. The interfacial fluctuation and irregularity of InGaAsP-InP quantum well has been depicted by the method in the paper
Keywords :
III-V semiconductors; fluctuations; gallium arsenide; gallium compounds; indium compounds; photoluminescence; probability; semiconductor quantum wells; spectral line broadening; statistical analysis; InGaAsP-InP; InGaAsP-InP quantum well; InGaAsP/InP quantum well structures; alloy composition fluctuation; alloy size radius; interfacial fluctuation; photoluminescence spectrum; photoluminescence spectrum characterization; quaternary semiconductor interface; statistical standard deviation theory; Equations; Excitons; Fluctuations; Indium phosphide; Photoluminescence; Probability; Semiconductor materials; Statistical distributions; Temperature; Wave functions;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484614
