Title :
Selective area OMCVD and its applications
Author_Institution :
Bellcore, Red Bank, NJ, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Summary form only given. In this talk, we will review the progress in selective area epitaxy using organometallic chemical vapor deposition (OMCVD) on substrates with patterned masks. Selective area epitaxy enables one to obtain lateral control of thickness, composition and doping
Keywords :
chemical vapour deposition; epitaxial growth; masks; optical fabrication; semiconductor doping; semiconductor growth; OMCVD; lateral thickness control; organometallic chemical vapor deposition; patterned masks; review; selective area OMCVD; selective area epitaxy; semiconductor composition; semiconductor doping; substrates; Chemical vapor deposition; Doping; Epitaxial growth; Gallium arsenide; Indium phosphide; Optical device fabrication; Quantum dot lasers; Substrates; Thickness control; Waveguide lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484615
