• DocumentCode
    3228058
  • Title

    Nanomagnetic circuits with spin torque majority gates

  • Author

    Nikonov, Dmitri E. ; Bourianoff, George I. ; Ghani, Tahir

  • Author_Institution
    Components Res., Intel Corp., Santa Clara, CA, USA
  • fYear
    2011
  • fDate
    15-18 Aug. 2011
  • Firstpage
    1384
  • Lastpage
    1388
  • Abstract
    Nanomagnetic or spintronic circuits hold the promise of non-volatile and reconfigurable logic with small switching energy. The concept of circuits based on spin transfer torque switching in magnetic tunnel junctions is presented. Majority gates are concatenated without conversion to electric signals. A full adder circuit is simulated with a micromagnetic solver, dynamics of magnetization is explained via motion of domain walls. The switching speed and energy of the adder bit is comparable to single gates or nanomagnetic memories. A nonlinear transfer characteristic ensures noise margin.
  • Keywords
    adders; magnetic circuits; magnetoelectronics; nanomagnetics; full adder circuit; magnetic tunnel junctions; micromagnetic solver; nanomagnetic circuits; nonvolatile logic; reconfigurable logic; spin torque majority gates; spintronic circuits; Adders; CMOS integrated circuits; Frequency modulation; Logic gates; Magnetization; Switches; Wires; Spintronics; gain; logic; majority gate; spin torque;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
  • Conference_Location
    Portland, OR
  • ISSN
    1944-9399
  • Print_ISBN
    978-1-4577-1514-3
  • Electronic_ISBN
    1944-9399
  • Type

    conf

  • DOI
    10.1109/NANO.2011.6144490
  • Filename
    6144490