DocumentCode :
3228058
Title :
Nanomagnetic circuits with spin torque majority gates
Author :
Nikonov, Dmitri E. ; Bourianoff, George I. ; Ghani, Tahir
Author_Institution :
Components Res., Intel Corp., Santa Clara, CA, USA
fYear :
2011
fDate :
15-18 Aug. 2011
Firstpage :
1384
Lastpage :
1388
Abstract :
Nanomagnetic or spintronic circuits hold the promise of non-volatile and reconfigurable logic with small switching energy. The concept of circuits based on spin transfer torque switching in magnetic tunnel junctions is presented. Majority gates are concatenated without conversion to electric signals. A full adder circuit is simulated with a micromagnetic solver, dynamics of magnetization is explained via motion of domain walls. The switching speed and energy of the adder bit is comparable to single gates or nanomagnetic memories. A nonlinear transfer characteristic ensures noise margin.
Keywords :
adders; magnetic circuits; magnetoelectronics; nanomagnetics; full adder circuit; magnetic tunnel junctions; micromagnetic solver; nanomagnetic circuits; nonvolatile logic; reconfigurable logic; spin torque majority gates; spintronic circuits; Adders; CMOS integrated circuits; Frequency modulation; Logic gates; Magnetization; Switches; Wires; Spintronics; gain; logic; majority gate; spin torque;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location :
Portland, OR
ISSN :
1944-9399
Print_ISBN :
978-1-4577-1514-3
Electronic_ISBN :
1944-9399
Type :
conf
DOI :
10.1109/NANO.2011.6144490
Filename :
6144490
Link To Document :
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