DocumentCode
3228058
Title
Nanomagnetic circuits with spin torque majority gates
Author
Nikonov, Dmitri E. ; Bourianoff, George I. ; Ghani, Tahir
Author_Institution
Components Res., Intel Corp., Santa Clara, CA, USA
fYear
2011
fDate
15-18 Aug. 2011
Firstpage
1384
Lastpage
1388
Abstract
Nanomagnetic or spintronic circuits hold the promise of non-volatile and reconfigurable logic with small switching energy. The concept of circuits based on spin transfer torque switching in magnetic tunnel junctions is presented. Majority gates are concatenated without conversion to electric signals. A full adder circuit is simulated with a micromagnetic solver, dynamics of magnetization is explained via motion of domain walls. The switching speed and energy of the adder bit is comparable to single gates or nanomagnetic memories. A nonlinear transfer characteristic ensures noise margin.
Keywords
adders; magnetic circuits; magnetoelectronics; nanomagnetics; full adder circuit; magnetic tunnel junctions; micromagnetic solver; nanomagnetic circuits; nonvolatile logic; reconfigurable logic; spin torque majority gates; spintronic circuits; Adders; CMOS integrated circuits; Frequency modulation; Logic gates; Magnetization; Switches; Wires; Spintronics; gain; logic; majority gate; spin torque;
fLanguage
English
Publisher
ieee
Conference_Titel
Nanotechnology (IEEE-NANO), 2011 11th IEEE Conference on
Conference_Location
Portland, OR
ISSN
1944-9399
Print_ISBN
978-1-4577-1514-3
Electronic_ISBN
1944-9399
Type
conf
DOI
10.1109/NANO.2011.6144490
Filename
6144490
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