Title :
Recent progress in GaN/SiC LEDs and photopumped lasers
Author :
Bulman, G.E. ; Edmond, J.A. ; Kong, H.S. ; Leonard, M. ; Dmitriev, V.A. ; Irvine, K.G. ; Nikolaev, V.I. ; Zubrilov, A.S. ; Tsvetkov, D.V.
Author_Institution :
Cree Res. Inc., Durham, NC, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Stimulated emission from optically pumped GaN layers grown on SiC has been reported over a wide temperature range of 77 to 450 K. However, there has been no report of photopumped lasing in a DH structure grown on SiC. This presentation will discuss recent progress in the development of GaN-based blue LEDs at Cree and photopumped lasing results obtained on GaN-AlGaN DH laser structures fabricated on SiC
Keywords :
III-V semiconductors; gallium compounds; light emitting diodes; optical fabrication; optical pumping; semiconductor growth; semiconductor lasers; silicon compounds; stimulated emission; vapour phase epitaxial growth; 77 to 450 K; Cree; DH structure; GaN; GaN-AlGaN DH laser structures fabrication; GaN-based blue LEDs; GaN/SiC LEDs; SiC; SiC substrates; optically pumped; photopumped lasers; photopumped lasing; stimulated emission; wide temperature range; Aluminum gallium nitride; Chemical technology; DH-HEMTs; Gallium nitride; Light emitting diodes; Optical pumping; Silicon carbide; Stimulated emission; Substrates; Temperature;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484616
