Title :
MgO/SiO2 dielectric multilayer reflectors for GaN-based ultra-violet surface emitting lasers
Author :
Sakaguchi, T. ; Katsube, A. ; Honda, T. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Japan
fDate :
30 Oct-2 Nov 1995
Abstract :
We have fabricated a 20 pair MgO-SiO2 dielectric multilayer reflector by an electron-beam evaporation system on Si substrates. This system can introduce the oxygen gas during the deposition to avoid the lack of oxygen, and each layer can be alternatively evaporated while monitoring the thickness with a crystal sensor
Keywords :
epitaxial growth; magnesium compounds; monitoring; optical fabrication; optical films; optical testing; reflectivity; semiconductor growth; semiconductor lasers; silicon compounds; surface emitting lasers; thickness measurement; vapour deposition; GaN; GaN-based ultra-violet surface emitting lasers; MgO-SiO2; MgO/SiO2 dielectric multilayer reflectors; Si; Si substrates; crystal sensor; deposition; electron-beam evaporation system; oxygen gas; thickness measurement; thickness monitoring; Dielectrics; Gallium nitride; Mirrors; Nonhomogeneous media; Optical surface waves; Reflectivity; Refractive index; Surface emitting lasers; Threshold current; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484617
