On the implementation of the LZZ calibration technique in the S-parameters measurement of devices mounted in test fixtures

Author

Pulido-Gaytan, M.A. ; Reynoso-Hernandez, J.A. ; Maya-Sanchez, M.C. ; Zarate-de Landa, A. ; Loo-Yau, J.R.

Author_Institution

Centro de Investig. Cienc. y de Educ. Super. de Ensenada (CICESE). Ensenada, Ensenada, Mexico

fYear

2015

fDate

22-22 May 2015

Firstpage

1

Lastpage

5

Abstract

This paper introduces a methodology for the design and verification of the set of microstrip structures necessary to implement the line, offset-open, offset-short (LZZ) calibration technique in the small-signal characterization of devices mounted in coaxial-to-microstrip test fixtures. The usefulness of the LZZ calibration in such application is verified by comparing the S-parameters of a GaN-HEMT packaged transistor corrected using the LZZ with those corrected using the thru-reflect-line (TRL) calibration technique.

Keywords

III-V semiconductors; S-parameters; calibration; coaxial cables; gallium compounds; high electron mobility transistors; microstrip lines; semiconductor device packaging; wide band gap semiconductors; GaN; HEMT packaged transistor; LZZ calibration technique; S-parameter measurement; TRL calibration technique; coaxial-to-microstrip test fixture; line offset-open offset-short calibration technique; small-signal characterization; thru-reflect-line calibration technique; Calibration; Fixtures; Impedance; Microstrip; Power transmission lines; Scattering parameters; Transmission line measurements; ABCD-parameters; LZZ calibration technique; microstrip calibration structures; test fixtures;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Measurement Conference (ARFTG), 2015 85th

Conference_Location

Phoenix, AZ

Type

conf

DOI

10.1109/ARFTG.2015.7162916

Filename

7162916