Title :
Improvement of luminescence properties of InGaP/InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD
Author :
Islam, M.R. ; Holmes, A.L. ; Dupuis, R.D. ; Gardner, N.F. ; Stillman, G.E.
Author_Institution :
Microelectron. Res. Center, Texas Univ., Austin, TX, USA
fDate :
30 Oct-2 Nov 1995
Abstract :
Data are presented on the luminescence performance of InGaP-InAlP QW heterostructures with oxidized InAlP cladding layers grown by MOCVD. The epitaxial layers are grown in a modified Emcore Model GS3200 UTM reactor at a pressure of 60 Torr. The epitaxial films are deposited at 750 C on GaAs:Si substrates oriented toward the nearest ⟨111⟩A direction. PL peak energies on InGaP bulk layers indicate nearly complete disordering of InGaP on GaAs substrates
Keywords :
claddings; optical fabrication; optical films; oxidation; photoluminescence; semiconductor growth; semiconductor heterojunctions; semiconductor quantum wells; substrates; vapour phase epitaxial growth; ⟨111⟩A direction; 60 torr; 750 C; GaAs substrates; GaAs:Si; GaAs:Si substrates; InGaP bulk layers; InGaP-InAlP; InGaP-InAlP QW heterostructures; InGaP/InAlP QW heterostructures; MOCVD; PL peak energie; complete disordering; epitaxial films; epitaxial layers; luminescence properties; modified Emcore Model GS3200 UTM reactor; oxidized InAlP cladding layers; Luminescence; Oxidation; Temperature; Time measurement;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484619
