Title :
Scanning tunneling microscopy observations of molecular beam epitaxially grown compound semiconductor surfaces
Author :
Ohkouchi, Shunsuke ; Ikoma, Nobuyuki
Author_Institution :
Optoelectron. Technol. Res. Lab., Tsukuba, Japan
fDate :
30 Oct-2 Nov 1995
Abstract :
Summary form only given. With the advent of scanning tunneling microscopy (STM), it became possible to observe individual atoms on the surfaces of semiconductors. In this paper, we report on the surface structures of compound semiconductor substrates, such as GaAs, InP and InAs, and heteroepitaxially grown surfaces on these substrates, using a multi-chamber STM system equipped with a molecular beam epitaxy (MBE) facility
Keywords :
microscopy; molecular beam epitaxial growth; scanning tunnelling microscopy; semiconductor growth; substrates; surface structure; GaAs; InAs; InP; MBE facility; STM; compound semiconductor substrates; heteroepitaxially grown surfaces; individual atoms; molecular beam epitaxially grown compound semiconductor surfaces; molecular beam epitaxy; multi-chamber STM system; scanning tunneling microscopy observations; semiconductor surfaces; surface structures; Gallium arsenide; Image reconstruction; Indium phosphide; Microscopy; Molecular beam epitaxial growth; Substrates; Surface reconstruction; Tunneling;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484621
