Title :
Suppression of side-etch and smoothing of micro-needle on etched surface by multistep RIBE
Author :
Matsutani, A. ; Koyama, F. ; Iga, K.
Author_Institution :
Precision & Intell. Lab., Tokyo Inst. of Technol., Japan
fDate :
30 Oct-2 Nov 1995
Abstract :
Reactive ion beam etch (RIBE) is one of the most important dry etching techniques for microfabrication of semiconductor devices such as microsized vertical-cavity surface-emitting lasers (VCSELs) which have a side-etched shape near the bottom of mesas We think the side-etch is caused due to the temperature rise by ion irradiation. In this paper, the measurement of surface temperature by using a radiation thermometer is carried out, in-situ during RIBE. We propose a multistep RIBE to improve etching profiles in order to alleviate the temperature rise. In this experiment, we used a high-vacuum RIBE system which has an electron cyclotron resonance-type ion source
Keywords :
etching; ion beam applications; laser cavity resonators; optical fabrication; semiconductor device testing; semiconductor lasers; semiconductor technology; surface emitting lasers; surface phenomena; temperature measurement; dry etching techniques; electron cyclotron resonance-type ion source; etched surface; etching profiles; high-vacuum RIBE system; ion irradiation; micro-needle; microfabrication; microsized vertical-cavity surface-emitting lasers; multistep RIBE; radiation thermometer; reactive ion beam etch; semiconductor device; side-etch suppression; side-etched shape; surface temperature; temperature rise; Dry etching; Electrons; Ion beams; Semiconductor devices; Semiconductor lasers; Shape; Smoothing methods; Surface emitting lasers; Temperature measurement; Vertical cavity surface emitting lasers;
Conference_Titel :
Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
Conference_Location :
San Francisco, CA
Print_ISBN :
0-7803-2450-1
DOI :
10.1109/LEOS.1995.484622
