• DocumentCode
    3228186
  • Title

    Successful application of dry etching technique using CH4/H2 gas to InGaAs/InP photodiode

  • Author

    Hyun, Kyung-Sook ; Park, Chan-Yong ; Kim, Jeong Soo ; Park, Bong Dae

  • Author_Institution
    Electron. & Telecommun. Res. Inst., Taejeon, South Korea
  • Volume
    2
  • fYear
    1995
  • fDate
    30 Oct-2 Nov 1995
  • Firstpage
    116
  • Abstract
    In conclusion, we have demonstrated the successful application of CH4/H2 RIE to InGaAs/InP APD with very low leakage current less than 5 nA at 0.9 Vb, which was high enough to cause large leakage current if any RIE-induced defect existed. We believe that the RIE using CH4/H2 gas, which is less toxic and less corrosive compared to the chlorinated gases, will be widely used in many other optical device fabrications
  • Keywords
    avalanche photodiodes; etching; gallium arsenide; indium compounds; ion beam applications; leakage currents; optical fabrication; semiconductor technology; InGaAs-InP; InGaAs/InP photodiode; chlorinated gases; dry etching technique; large leakage current; low leakage current; optical device fabrications; Dark current; Dry etching; Hydrogen; Indium gallium arsenide; Indium phosphide; Plasma applications; Plasma density; Surface contamination; Surface morphology; Thickness control;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE
  • Conference_Location
    San Francisco, CA
  • Print_ISBN
    0-7803-2450-1
  • Type

    conf

  • DOI
    10.1109/LEOS.1995.484624
  • Filename
    484624
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3228186