Progress in blue/green laser diodes

Author

Okuyama, H. ; Itoh, Satoshi ; Ikeda, Masao ; Ishibashi, Akira

Author_Institution

Res. Center, Sony Corp., Yokohama, Japan

Volume

2

fYear

1995

fDate

30 Oct-2 Nov 1995

Firstpage

129

Abstract

Summary form only given. We observe the RT operation of ZnSe-ZnMgSSe laser diodes and the mechanism of the emission of II-VI LDs is concluded to be the recombination of electron-hole plasma. In my presentation, the growth conditions of II-VI compound semiconductors for improving the life time of the laser diodes and light-emitting diodes beyond the present life time (typically 1 hour) will be discussed

Keywords

II-VI semiconductors; electron-hole recombination; life testing; light emitting diodes; magnesium compounds; semiconductor device testing; semiconductor lasers; semiconductor plasma; zinc compounds; 1 h; II-VI LDs; II-VI compound semiconductors; RT operation; ZnSe-ZnMgSSe; ZnSe-ZnMgSSe laser diodes; blue/green laser diodes; electron-hole plasma recombination; growth conditions; laser diodes; life time; light-emitting diodes; Degradation; Diode lasers; Electrons; Epitaxial growth; Gallium arsenide; Light emitting diodes; Planar waveguides; Plasma temperature; Substrates; Zinc compounds;

fLanguage

English

Publisher

ieee

Conference_Titel

Lasers and Electro-Optics Society Annual Meeting, 1995. 8th Annual Meeting Conference Proceedings, Volume 1., IEEE

Conference_Location

San Francisco, CA

Print_ISBN

0-7803-2450-1

Type

conf

DOI

10.1109/LEOS.1995.484630

Filename

484630