Title :
Design of an X-band high power solid state power amplifier based on GaN HEMT
Author :
Feng, Ni ; Jianhong, Fang ; Hao, Feng ; Chaoyang, Wang ; Jianwei, Liu
Author_Institution :
Radar & Avionics Inst. of AVIC, Wuxi, China
Abstract :
Based on GaN HEMT´s high output power, low power loss and efficient heat dissipation, an X-band, 50W solid state power amplifier is designed. Slotted-waveguide directional coupler is designed as a 2-way power divider/combiner. At last, the output power, 165W, is combined through three power combiners by four 50W solid state power amplifiers.
Keywords :
III-V semiconductors; directional couplers; gallium compounds; high electron mobility transistors; power amplifiers; power combiners; power dividers; GaN; GaN HEMT; X-band high power solid state power amplifier; heat dissipation; power 165 W; power 50 W; power combiner; power divider; slotted-waveguide directional coupler; Cogeneration; Directional couplers; Gallium nitride; HEMTs; High power amplifiers; Power amplifiers; Power combiners; Power dividers; Power generation; Solid state circuits;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524802
