A low voltage current mirror based on quasi-floating gate MOSFETs

A low voltage current mirror based on quasi-floating gate MOSFET (QFGMOS) is presented. The use of QFGMOS eliminates the limitations associated with floating-gate MOSFET (FGMOS) structures like increased silicon area, initial charge trapped in the floating gates and gain-bandwidth product degradation. The proposed current mirror based on QFGMOS has a current range up to 500 μA with offset of 10 pA, exhibits high bandwidth of 640 MHz, input resistance of 480 Ω, output resistance of 1.67 GΩ, unity current transfer ratio and dissipates 1.5 mW power. A resistive compensation has also been employed to increase the bandwidth up to 1.3 GHz.