Title :
Study of size effect on the conductivity of nano-silver colloids
Author :
Zhao, Wen ; Li, Luhai ; Danzeng, Luobu
Author_Institution :
Lab. of Printing&Packaging Mater. & Technol., Beijing Inst. of Graphic Commun., Beijing, China
Abstract :
Two nano-silver particles, 22 nm and 120 nm, were prepared by the polyol method where silver nitride was as the silver source and polyvinylpyrrolidone (PVP) was added to prevent the as-synthesized nanoparticles from agglomeration. After that, the particles in the colloid form were coated separately, where photo paper was the substrate. It is found that the resistances of the two coatings are strongly depending on the particle sizes. Through heating process, the 22 nm silver coating shows excellent conductivity which the sheet resistance can decrease to 0.39 Ω/□ when it was heating for 10 min, 200 °C. Meanwhile, the 120 nm silver coating showed high resistance. UV-vis spectrum was used to characteristic the nano Ag colloids, the resistivity variation and microstructure of the Ag coating were using a four-point probe and scanning electron microscopy (SEM). The good conductivity of the 22 nm Ag colloid coating shows us a bright future which can be used as the conductive ink of printing electronics.
Keywords :
coatings; colloids; electrical conductivity; nanofabrication; nanoparticles; particle size; scanning electron microscopy; silver; size effect; ultraviolet spectra; visible spectra; Ag; SEM; UV-vis spectrum; agglomeration; conductive ink; conductivity; four-point probe; heating process; microstructure; nanoparticles; nanosilver colloids; nanosilver particles; particle size; polyol method; polyvinylpyrrolidone; printing electronics; resistivity variation; scanning electron microscopy; sheet resistance; silver coating; silver nitride; size 120 nm; size 22 nm; size effect; Coatings; Conductivity; Ink; Microstructure; Nanoparticles; Printing; Probes; Resistance heating; Scanning electron microscopy; Silver;
Conference_Titel :
Microwave and Millimeter Wave Technology (ICMMT), 2010 International Conference on
Conference_Location :
Chengdu
Print_ISBN :
978-1-4244-5705-2
DOI :
10.1109/ICMMT.2010.5524805