• DocumentCode
    3228426
  • Title

    Interfacial and Nanostructural Enhancements in Organic Semiconductor Sensors and Diodes

  • Author

    Katz, Howard E.

  • Author_Institution
    Dept. of Mater. Sci. & Eng., Johns Hopkins Univ., Baltimore, MD
  • fYear
    2008
  • fDate
    21-24 Jan. 2008
  • Firstpage
    1
  • Lastpage
    4
  • Abstract
    Interfaces often control the performance and activity of organic devices and can be harnessed for new and enhanced functions. Interface engineering has enabled us to modulate the threshold (turn-on) voltage of a field effect transistor made from a solution-deposited semiconductor, and to increase the switching speed of an organic semiconductor diode by three orders of magnitude. Interfacial chemistry provides capabilities for using organic transistors as sensors for vapors of military and security interest, especially nerve gas simulants. As the devices become thinner and thinner, to the point where they are almost entirely interfacial, sensitivity enters the parts-per-billion regime and response speeds decrease from minutes to seconds. Selectivity and sensitivity are enhanced through the use of receptor functionality on surfaces. Receptor chemistry and electrostatics both contribute to the sensing mechanism.
  • Keywords
    nanotechnology; organic semiconductors; semiconductor diodes; sensors; interface engineering; interfacial chemistry; interfacial enhancement; nanostructural enhancement; organic devices; organic semiconductor diode; organic semiconductor sensor; organic transistor; receptor chemistry; receptor functionality; Chemistry; Circuits; Crystalline materials; Dielectric devices; Dielectric substrates; OFETs; Organic light emitting diodes; Organic semiconductors; Semiconductor diodes; Threshold voltage; Organic transistor; diode; floating gate; vapor sensor;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Flexible Electronics and Displays Conference and Exhibition, 2008
  • Conference_Location
    Phoenix, AZ
  • Print_ISBN
    978-1-4244-2053-7
  • Electronic_ISBN
    978-1-4244-2054-4
  • Type

    conf

  • DOI
    10.1109/FEDC.2008.4483881
  • Filename
    4483881